標題: HIGH-RESOLUTION X-RAY CHARACTERIZATION OF LOW-TEMPERATURE GAAS/AS SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY
作者: CHENG, TM
CHANG, CY
CHANG, TC
HUANG, JH
HUANG, MF
材料科學與工程學系
電控工程研究所
Department of Materials Science and Engineering
Institute of Electrical and Control Engineering
公開日期: 27-六月-1994
摘要: High-resolution x-ray analysis of Si delta-doped GaAs grown by molecular-beam epitaxy at a low substrate temperature (230-degrees-C) is presented. Superlattice satellite peaks in the rocking curve are observed for the sample annealed at 700-degrees-C for 10 min. The peak intensity increases with increasing postgrowth annealing temperature and reaches the maximum value for the 900-degrees-C annealed sample. The evolution of the x-ray rocking curves can be explained consistently by the formation of a GaAs/As superlattice during the annealing period based on the transmission electron microscope observations.
URI: http://dx.doi.org/10.1063/1.111225
http://hdl.handle.net/11536/2448
ISSN: 0003-6951
DOI: 10.1063/1.111225
期刊: APPLIED PHYSICS LETTERS
Volume: 64
Issue: 26
起始頁: 3626
結束頁: 3628
顯示於類別:期刊論文