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dc.contributor.authorCheng, Shiau-Shinen_US
dc.contributor.authorHuang, Peng-Yien_US
dc.contributor.authorRamesh, Mohanen_US
dc.contributor.authorChang, Hsiu-Chiehen_US
dc.contributor.authorChen, Li-Mingen_US
dc.contributor.authorYeh, Chia-Mingen_US
dc.contributor.authorFung, Chun-Linen_US
dc.contributor.authorWu, Meng-Chyien_US
dc.contributor.authorLiu, Chung-Chien_US
dc.contributor.authorKim, Choongiken_US
dc.contributor.authorLin, Hong-Cheuen_US
dc.contributor.authorChen, Ming-Chouen_US
dc.contributor.authorChu, Chih-Weien_US
dc.date.accessioned2014-12-08T15:36:09Z-
dc.date.available2014-12-08T15:36:09Z-
dc.date.issued2014-04-01en_US
dc.identifier.issn1616-301Xen_US
dc.identifier.urihttp://dx.doi.org/10.1002/adfm.201303378en_US
dc.identifier.urihttp://hdl.handle.net/11536/24494-
dc.description.abstractSolution-processed small-molecule bulk heterojunction (BHJ) ambipolar organic thin-film transistors are fabricated based on a combination of [2-phenylbenzo[d,d \']thieno[3,2-b;4,5-b \']dithiophene (P-BTDT) : 2-(4-n-octylphenyl)benzo[d,(d) under bar \']thieno[3,2-b;4,5-b\']dithiophene (OP-BTDT)] and C-60. Treating high electrical performance vacuum-deposited P-BTDT organic semiconductors with a newly developed solution-processed organic semiconductor material, OP-BTDT, in an optimized ratio yields a solution-processed p-channel organic semiconductor blend with carrier mobility as high as 0.65 cm(2) V-1 s(-1). An optimized blending of P-BTDT:OP-BTDT with the n-channel semiconductor, C-60, results in a BHJ ambipolar transistor with balanced carrier mobilities for holes and electrons of 0.03 and 0.02 cm(2) V-1 s(-1), respectively. Furthermore, a complementary-like inverter composed of two ambipolar thin-film transistors is demonstrated, which achieves a gain of 115.en_US
dc.language.isoen_USen_US
dc.subjectthin-film transistorsen_US
dc.subjectsolution processen_US
dc.subjectambipolaren_US
dc.subjectbulk heterojunctionsen_US
dc.subjectinvertersen_US
dc.titleSolution-Processed Small-Molecule Bulk Heterojunction Ambipolar Transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/adfm.201303378en_US
dc.identifier.journalADVANCED FUNCTIONAL MATERIALSen_US
dc.citation.volume24en_US
dc.citation.issue14en_US
dc.citation.spage2057en_US
dc.citation.epage2063en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000333809300012-
dc.citation.woscount7-
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