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dc.contributor.authorChiang, Tun-Yuanen_US
dc.contributor.authorWen, Hua-Chiangen_US
dc.contributor.authorChou, Wu-Chingen_US
dc.contributor.authorTsai, Chien-Huangen_US
dc.date.accessioned2014-12-08T15:36:09Z-
dc.date.available2014-12-08T15:36:09Z-
dc.date.issued2014-03-15en_US
dc.identifier.issn0022-0248en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jcrysgro.2013.12.013en_US
dc.identifier.urihttp://hdl.handle.net/11536/24495-
dc.description.abstractThis investigation demonstrates the temperature-dependent mechanical properties of Si80Ge20 alloy films via a nanoindenter in the indentation depth of 100 nm. The roughly equal root mean square roughness (R-rms) values and repeatable load-displacement (P-delta) curves for the samples ensure the mechanical performances mainly contributed from the influences of annealing temperatures. The hardness (H) values of samples increase with the temperatures of an initial annealing in the range from RT to 900 degrees C, and, conversely, decrease for annealing temperatures over 900 degrees C. Accordingly, both E/H and h(r)/h(max) values, exhibiting an inverse tendency in the above temperature range, hints that the solid solution strengthening effect and the softening phenomenon occur for the initial-annealing and over-annealing stages, respectively. In addition, grazing incidence X-ray diffraction (GIXRD) analysis demonstrates the lattice expansion and the broadened peak that attribute to the solid solution strengthening of samples and the segregation of Ge, respectively. Through observing the value of the (200) lattice spacing of 5.624 A for a 900 degrees C-annealed sample by transmission electron microscopy (TEM) analysis, it is verified that the segregation of Ge is responsible for the decreased hardness for the 1000 degrees C-annealed sample. (C) 2013 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectCharacterizationen_US
dc.subjectCrystal structureen_US
dc.subjectSemiconducting silicon compoundsen_US
dc.titleSolid solution strengthening and phase transformation in high-temperature annealed Si80Ge20 alloyen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jcrysgro.2013.12.013en_US
dc.identifier.journalJOURNAL OF CRYSTAL GROWTHen_US
dc.citation.volume390en_US
dc.citation.issueen_US
dc.citation.spage92en_US
dc.citation.epage95en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000335770000016-
dc.citation.woscount1-
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