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dc.contributor.authorWU, JWen_US
dc.contributor.authorCHANG, CYen_US
dc.contributor.authorLIN, KCen_US
dc.contributor.authorCHAN, SHen_US
dc.contributor.authorCHEN, HDen_US
dc.contributor.authorCHEN, PAen_US
dc.contributor.authorCHANG, EYen_US
dc.contributor.authorKUO, MSen_US
dc.date.accessioned2014-12-08T15:03:56Z-
dc.date.available2014-12-08T15:03:56Z-
dc.date.issued1994-06-15en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.33.L832en_US
dc.identifier.urihttp://hdl.handle.net/11536/2451-
dc.description.abstractThe Ga0.5In0.5P epilayer was grown by low-pressure metalorganic chemical vapor deposition. Trimethylgallium and triethylgallium were used as the gallium source's, while trimethylindium and ethyldimethylindium were used as the indium sources. The use of triethylgallium incorporated with trimethylindium enhanced the growth rate of Ga0.5In0.5P as compared to incorporation with ethyldimethylindium. While the use of trimethylgallium incorporated with ethyldimethylindium enhanced the growth rate of Ga0.5In0.5P significantly, as compared to incorporation with trimethylindium.en_US
dc.language.isoen_USen_US
dc.subjectGAINPen_US
dc.subjectLOW-PRESSURE MOCVDen_US
dc.subjectTMGAen_US
dc.subjectTEGAen_US
dc.subjectTMINen_US
dc.subjectEDMINen_US
dc.titleCATION SOURCE DEPENDENCE OF GA0.5IN0.5P GROWTH-RATE BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITIONen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.33.L832en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERSen_US
dc.citation.volume33en_US
dc.citation.issue6Ben_US
dc.citation.spageL832en_US
dc.citation.epageL833en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1994PB43000006-
dc.citation.woscount1-
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