CATION SOURCE DEPENDENCE OF GA0.5IN0.5P GROWTH-RATE BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION

Title:	CATION SOURCE DEPENDENCE OF GA0.5IN0.5P GROWTH-RATE BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors:	WU, JW CHANG, CY LIN, KC CHAN, SH CHEN, HD CHEN, PA CHANG, EY KUO, MS 材料科學與工程學系電控工程研究所 Department of Materials Science and Engineering Institute of Electrical and Control Engineering
Keywords:	GAINP;LOW-PRESSURE MOCVD;TMGA;TEGA;TMIN;EDMIN
Issue Date:	15-Jun-1994
Abstract:	The Ga0.5In0.5P epilayer was grown by low-pressure metalorganic chemical vapor deposition. Trimethylgallium and triethylgallium were used as the gallium source's, while trimethylindium and ethyldimethylindium were used as the indium sources. The use of triethylgallium incorporated with trimethylindium enhanced the growth rate of Ga0.5In0.5P as compared to incorporation with ethyldimethylindium. While the use of trimethylgallium incorporated with ethyldimethylindium enhanced the growth rate of Ga0.5In0.5P significantly, as compared to incorporation with trimethylindium.
URI:	http://dx.doi.org/10.1143/JJAP.33.L832 http://hdl.handle.net/11536/2451
ISSN:	0021-4922
DOI:	10.1143/JJAP.33.L832
Journal:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume:	33
Issue:	6B
Begin Page:	L832
End Page:	L833
Appears in Collections:	Articles

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