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dc.contributor.authorMeena, Jagan Singhen_US
dc.contributor.authorChu, Min-Chingen_US
dc.contributor.authorSingh, Ranjodhen_US
dc.contributor.authorWu, Chung-Shuen_US
dc.contributor.authorChand, Umeshen_US
dc.contributor.authorYou, Hsin-Chiangen_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorShieh, Han-Ping D.en_US
dc.contributor.authorKo, Fu-Hsiangen_US
dc.date.accessioned2014-12-08T15:36:10Z-
dc.date.available2014-12-08T15:36:10Z-
dc.date.issued2014en_US
dc.identifier.issn2046-2069en_US
dc.identifier.urihttp://hdl.handle.net/11536/24529-
dc.identifier.urihttp://dx.doi.org/10.1039/c4ra01517gen_US
dc.description.abstractWe report a simple approach to fabricate an organic-inorganic hybrid gate insulator based n-type thin-film transistor (TFT) on a plastic polyimide (PI) sheet at room temperature using an appropriate composition of commercially available polymers and block copolymer surfactant. The composite material film namely; polystyrene-block-poly(methylmethacrylate) (PS-b-PMMA) is readily deposited as a gate dielectric with zinc oxide (ZnO) as a semiconductor layer. This new dielectric material film exhibits high surface energy, high air stability, very low leakage current density and better dielectric constant as compared to the conventional polymer dielectrics. This plastic ZnO-TFT combines the advantages of a high-mobility transparent inorganic semiconductor with an ultrathin high-capacitance and low-leakage PS-b-PMMA composite gate dielectric. Fourier transform infrared (FT-IR) spectrum analysis is used for the PS-b-PMMA film to confirm the presence of functional components in this composite material film. The contact angle measurements for three test liquids (e.g., distilled water, ethylene glycol and diiodomethane) reveal that the composite dielectric materials film is nearly hydrophobic and the calculated surface energy is 35.05 mJ m(-2). The resulting TFT exhibits excellent operating characteristics at V-DS=10 V with a drain-source current on/off modulation ratio (I-on/I-off) of 3.12 x 10(6) and a carrier mobility of 2.48 cm(2) V-1 s(-1). Moreover in the bending mode and in a normal environment, the device remained undistorted and shows better reliability and performance, while the thickness of PS-b-PMMA is about 28 nm. The results have suggested a new and easy approach for achieving transparent and functionally bendable optoelectronics devices.en_US
dc.language.isoen_USen_US
dc.titlePolystyrene-block-poly(methylmethacrylate) composite material film as a gate dielectric for plastic thin-film transistor applicationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c4ra01517gen_US
dc.identifier.journalRSC ADVANCESen_US
dc.citation.volume4en_US
dc.citation.issue36en_US
dc.citation.spage18493en_US
dc.citation.epage18502en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000335556800002-
dc.citation.woscount3-
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