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dc.contributor.authorChang, Tai-minen_US
dc.contributor.authorHu, Jen-Lien_US
dc.contributor.authorLin, Bo-Wenen_US
dc.contributor.authorWu, YewChung Sermonen_US
dc.date.accessioned2014-12-08T15:36:13Z-
dc.date.available2014-12-08T15:36:13Z-
dc.date.issued2013en_US
dc.identifier.isbn978-1-60768-430-5en_US
dc.identifier.issn1938-5862en_US
dc.identifier.urihttp://hdl.handle.net/11536/24555-
dc.identifier.urihttp://dx.doi.org/10.1149/05042.0033ecsten_US
dc.description.abstractThermal management of LED is currently an important issue because the increase of junction temperature degrades LED\'s performance and reliability. Replace that substrate to high thermal conductivity substrate can improved this problem. Diamond has the highest thermal conductivity (similar to 2000W/mK) in all material but is hard to process and has low reactivity with other material. In this study, high-brightness III-V light-emitting diodes on Si/diamond composite substrate can be fabricate by filled diamond particle into the blind-hole of the silicon substrate, wafer-bonding and lift-off process. In order to confirm that diamond particle provided a direct thermal path for heat dissipation, a simple sandwich structure was also been done.en_US
dc.language.isoen_USen_US
dc.titleHigh brightness III-V light-emitting diodes on diamond/silicon composite substrateen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1149/05042.0033ecsten_US
dc.identifier.journalMATERIALS FOR SOLID STATE LIGHTINGen_US
dc.citation.volume50en_US
dc.citation.issue42en_US
dc.citation.spage33en_US
dc.citation.epage37en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000338315700005-
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