標題: | Characterizations of GaN Films Grown on Si (111) Substrates with Various Growth Temperatures of Multiple AlN Buffer Layers |
作者: | Binh-Tinh Tran Chang, Edward Yi Lin, Kung-Liang Luong, Tien-Tung Yu, Hung-Wei Huang, Man-Chi Chung, Chen-Chen Hai-Dang Trinh Hong-Quan Nguyen Chi-Lang Nguyen Quang-Ho Luc 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 2012 |
摘要: | We present the effect of multiple AlN buffer layers on characterizations of GaN film quality, which includes a thin high-low-high-temperature (HLHT) AlN buffer layers. The study is based on two different thicknesses of the GaN films on the buffers and found that the HLHT AlN buffer layers could significantly affect on the GaN films qualities. The buffer plays a very important role for the growth of GaN film on Si (111) substrate. The GaN film with an uniformly faceted surface and very high-quality has been obtained at the optimized multiple HLHT AlN buffer layers of 50-nm-thick at 1010-800-1010 degrees C. |
URI: | http://hdl.handle.net/11536/24563 http://dx.doi.org/10.1149/05003.0461ecst |
ISBN: | 978-1-60768-351-3 |
ISSN: | 1938-5862 |
DOI: | 10.1149/05003.0461ecst |
期刊: | GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 2 |
Volume: | 50 |
Issue: | 3 |
起始頁: | 461 |
結束頁: | 467 |
顯示於類別: | 會議論文 |