標題: Characterizations of GaN Films Grown on Si (111) Substrates with Various Growth Temperatures of Multiple AlN Buffer Layers
作者: Binh-Tinh Tran
Chang, Edward Yi
Lin, Kung-Liang
Luong, Tien-Tung
Yu, Hung-Wei
Huang, Man-Chi
Chung, Chen-Chen
Hai-Dang Trinh
Hong-Quan Nguyen
Chi-Lang Nguyen
Quang-Ho Luc
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2012
摘要: We present the effect of multiple AlN buffer layers on characterizations of GaN film quality, which includes a thin high-low-high-temperature (HLHT) AlN buffer layers. The study is based on two different thicknesses of the GaN films on the buffers and found that the HLHT AlN buffer layers could significantly affect on the GaN films qualities. The buffer plays a very important role for the growth of GaN film on Si (111) substrate. The GaN film with an uniformly faceted surface and very high-quality has been obtained at the optimized multiple HLHT AlN buffer layers of 50-nm-thick at 1010-800-1010 degrees C.
URI: http://hdl.handle.net/11536/24563
http://dx.doi.org/10.1149/05003.0461ecst
ISBN: 978-1-60768-351-3
ISSN: 1938-5862
DOI: 10.1149/05003.0461ecst
期刊: GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 2
Volume: 50
Issue: 3
起始頁: 461
結束頁: 467
Appears in Collections:Conferences Paper