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dc.contributor.authorShen, Mo-Yuanen_US
dc.contributor.authorLi, Bor-Ranen_US
dc.contributor.authorLi, Yaw-Kuenen_US
dc.date.accessioned2014-12-08T15:36:16Z-
dc.date.available2014-12-08T15:36:16Z-
dc.date.issued2014-10-15en_US
dc.identifier.issn0956-5663en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.bios.2014.03.057en_US
dc.identifier.urihttp://hdl.handle.net/11536/24597-
dc.description.abstractSilicon nanowire field effect transistors (SiNW-FETs) have shown great promise as biosensors in highly sensitive, selective, real-time and label-free measurements. While applications of SiNW-FETs for detection of biological species have been described in several publications, less attention has been devoted to summarize the conjugating methods involved in linking organic bio-receptors with the inorganic transducer and the strategies of improving the sensitivity of devices. This article attempts to focus on summarizing the various organic immobilization approaches and discussing various sensitivity improving strategies, that include (I) reducing non-specific binding, (II) alignment of the probes, (III) enhancing signals by charge reporter, (IV) novel architecture structures, and (V) sensing in the subthreshold regime. (C) 2014 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectField-effect transistoren_US
dc.subjectBiosensoren_US
dc.subjectSurface modificationen_US
dc.subjectSensitivity enhancementen_US
dc.titleSilicon nanowire field-effect-transistor based biosensors: From sensitive to ultra-sensitiveen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.bios.2014.03.057en_US
dc.identifier.journalBIOSENSORS & BIOELECTRONICSen_US
dc.citation.volume60en_US
dc.citation.issueen_US
dc.citation.spage101en_US
dc.citation.epage111en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:000337863900014-
dc.citation.woscount7-
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