標題: Formation of NiSi-silicided p(+)n shallow junctions by BF(2)(+) implantation into/through silicide and rapid thermal annealing
作者: Wang, CC
Wu, YK
Wu, WH
Chen, MC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-一月-2005
摘要: NiSi-silicided p(+) n shallow junctions are fabricated by BF(2)(+) implantation into/through a thin NiSi silicide layer, followed by rapid thermal annealing (RTA). The NiSi film starts to show agglomeration after RTA at 650degreesC, which may result in the formation of discontinuous islands at higher temperatures. The incorporation of fluorine atoms in the NiSi film can retard the film agglomeration making the film stable up to 800degreesC. A forward ideality factor very close to unity and a reverse bias current density of 0.6 nA/cm(2) can be attained for the NiSi(31 nm)/p(+)n junctions fabricated by BF(2)(+) implantation to a dose of 5 x 10(15) cm(-2) at 35 keV, followed by RTA for 30 s at 650degreesC; the junction formed is about 37 nm measured from the NiSi/Si interface. Activation energy measurement shows that the reverse bias junction currents are dominated by the diffusion current, which indicates that most of the implanted damage can be recovered by RTA at temperatures as low as 650degreesC.
URI: http://dx.doi.org/10.1143/JJAP.44.108
http://hdl.handle.net/11536/24624
ISSN: 0021-4922
DOI: 10.1143/JJAP.44.108
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 44
Issue: 1A
起始頁: 108
結束頁: 113
顯示於類別:期刊論文