Two-dimensional photo-mapping on CMOS single-photon avalanche diodes

doi:10.1364/OE.22.016462

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Wu, Jau-Yang	en_US
dc.contributor.author	Lu, Ping-Keng	en_US
dc.contributor.author	Lin, Sheng-Di	en_US
dc.date.accessioned	2014-12-08T15:36:18Z	-
dc.date.available	2014-12-08T15:36:18Z	-
dc.date.issued	2014-06-30	en_US
dc.identifier.issn	1094-4087	en_US
dc.identifier.uri	http://dx.doi.org/10.1364/OE.22.016462	en_US
dc.identifier.uri	http://hdl.handle.net/11536/24632	-
dc.description.abstract	Two-dimensional (2-D) photo-count mapping on CMOS single photon avalanche diodes (SPADs) has been demonstrated. Together with the varied incident wavelengths, the depth-dependent electric field distribution in active region has been investigated on two SPADs with different structures. Clear but different non-uniformity of photo-response have been observed for the two studied devices. With the help of simulation tool, the non-uniform photo-counts arising from the electric field non-uniformity have been well explained. As the quasi-3D distribution of electric field in the active region can be mapped, our method is useful for engineering the device structure to improve the photo-response of SPADs. (C) 2014 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	Two-dimensional photo-mapping on CMOS single-photon avalanche diodes	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1364/OE.22.016462	en_US
dc.identifier.journal	OPTICS EXPRESS	en_US
dc.citation.volume	22	en_US
dc.citation.issue	13	en_US
dc.citation.spage	16462	en_US
dc.citation.epage	16471	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000338055900123	-
dc.citation.woscount	0	-
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