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dc.contributor.authorStrelcov, Evghenien_US
dc.contributor.authorBelianinov, Alexeien_US
dc.contributor.authorHsieh, Ying-Huien_US
dc.contributor.authorJesse, Stephenen_US
dc.contributor.authorBaddorf, Arthur P.en_US
dc.contributor.authorChu, Ying-Haoen_US
dc.contributor.authorKalinin, Sergei V.en_US
dc.date.accessioned2014-12-08T15:36:19Z-
dc.date.available2014-12-08T15:36:19Z-
dc.date.issued2014-06-01en_US
dc.identifier.issn1936-0851en_US
dc.identifier.urihttp://dx.doi.org/10.1021/nn502029ben_US
dc.identifier.urihttp://hdl.handle.net/11536/24660-
dc.description.abstractSpatial variability of electronic transport in BiFeO3-CoFe2O4 (BFO-CFO) self-assembled heterostructures is explored using spatially resolved first-order reversal curve (FOR) current voltage (IV) mapping. Multivariate statistical analysis of FORC-IV data classifies statistically significant behaviors and maps characteristic responses spatially. In particular, regions of grain, matrix, and grain boundary responses are clearly identified, k-Means and Bayesian demixing analysis suggest the characteristic response be separated into four components, with hysteretic-type behavior localized at the BFO-CFO tubular interfaces. The conditions under which Bayesian components allow direct physical interpretation are explored, and transport mechanisms at the grain boundaries and individual phases are analyzed. This approach conjoins multivariate statistical analysis with physics-based interpretation, actualizing a robust, universal, data-driven approach to problem solving, which can be applied to exploration of local transport and other functional phenomena in other spatially inhomogeneous systems.en_US
dc.language.isoen_USen_US
dc.subjectconduction hysteresisen_US
dc.subjectoxide heterostructuresen_US
dc.subjectmultivariate analysisen_US
dc.subjectbig dataen_US
dc.subjectscanning probe microscopyen_US
dc.subjectFORC-IVen_US
dc.titleDeep Data Analysis of Conductive Phenomena on Complex Oxide Interfaces: Physics from Data Miningen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/nn502029ben_US
dc.identifier.journalACS NANOen_US
dc.citation.volume8en_US
dc.citation.issue6en_US
dc.citation.spage6449en_US
dc.citation.epage6457en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000338089200114-
dc.citation.woscount4-
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