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dc.contributor.authorZhang, Ruien_US
dc.contributor.authorChang, Kuan-Changen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorTsai, Tsung-Mingen_US
dc.contributor.authorHuang, Syuan-Yongen_US
dc.contributor.authorChen, Wen-Jenen_US
dc.contributor.authorChen, Kai-Huangen_US
dc.contributor.authorLou, Jen-Chungen_US
dc.contributor.authorChen, Jung-Huien_US
dc.contributor.authorYoung, Tai-Faen_US
dc.contributor.authorChen, Min-Chenen_US
dc.contributor.authorChen, Hsin-Luen_US
dc.contributor.authorLiang, Shu-Pingen_US
dc.contributor.authorSyu, Yong-Enen_US
dc.contributor.authorSze, Simon M.en_US
dc.date.accessioned2014-12-08T15:36:21Z-
dc.date.available2014-12-08T15:36:21Z-
dc.date.issued2014-06-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2014.2316806en_US
dc.identifier.urihttp://hdl.handle.net/11536/24697-
dc.description.abstractIn this letter, we report the oxygen accumulation effect and its influence on resistive switching for gadolinium-doped silicon dioxide (Gd:SiO2) resistance random access memory (RRAM). We find that oxygen absorbance by indium-tin-oxide electrode affects the conduction current mechanism, and remarkably modifies the device performance of RRAM devices. By current fitting, Schottky emission can be observed in both low and high resistance states, from which conduction model is proposed to clarify the oxygen accumulation phenomenon. Reliability tests, including endurance and high temperature retention are further carried out, evaluating the significance of oxygen accumulation effect in redox reaction for RRAM devices.en_US
dc.language.isoen_USen_US
dc.subjectOxygen accumulationen_US
dc.subjectindium tin oxideen_US
dc.subjectSchottky emissionen_US
dc.subjectRRAMen_US
dc.titleCharacterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memoryen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2014.2316806en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume35en_US
dc.citation.issue6en_US
dc.citation.spage630en_US
dc.citation.epage632en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000337136900008-
dc.citation.woscount4-
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