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dc.contributor.authorChen, Ching-Enen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorChen, Hua-Maoen_US
dc.contributor.authorYou, Boen_US
dc.contributor.authorYang, Kai-Hsiangen_US
dc.contributor.authorHo, Szu-Hanen_US
dc.contributor.authorTsai, Jyun-Yuen_US
dc.contributor.authorLiu, Kuan-Juen_US
dc.contributor.authorLu, Ying-Hsinen_US
dc.contributor.authorHung, Yu-Juen_US
dc.contributor.authorTai, Ya-Hsiangen_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.date.accessioned2014-12-08T15:36:22Z-
dc.date.available2014-12-08T15:36:22Z-
dc.date.issued2014-06-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2014.2316316en_US
dc.identifier.urihttp://hdl.handle.net/11536/24699-
dc.description.abstractThis letter investigates the abnormal OFF-current behavior induced by hot carrier stress (HCS) in p-channel double diffused drain metal-oxide-semiconductor transistors with a shallow trench isolation (STI) structure. According to ISE-TCAD simulation, the electric field at the drain-side corners of the high-voltage n-well (HVNW) adjacent to the STI trench is stronger than the electric field in the channel center in width direction. Moreover, because a nitride layer acts as a buffer in STI, the electrons generated by impact ionization at the corners of the HVNW can be easily trapped in the nitride layer or at the liner oxide/nitride layer interface. Furthermore, the extension of electron trapping in STI from drain to source during HCS forms the OFF-current conductive path. Based on the charge pumping measurements at different operation conditions, this path formation is further demonstrated by the comparisons of charge pumping measurements between initial state and after HCS.en_US
dc.language.isoen_USen_US
dc.subjectHot carrier stressen_US
dc.subjectdouble diffused drain metal-oxide-semiconductoren_US
dc.subject(DDDMOS)en_US
dc.subjectshallow trench isolation (STI)en_US
dc.titleOn the Origin of Anomalous OffCurrent Under Hot Carrier Stress in p-Channel DDDMOS Transistors With STI Structureen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2014.2316316en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume35en_US
dc.citation.issue6en_US
dc.citation.spage651en_US
dc.citation.epage653en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000337136900015-
dc.citation.woscount2-
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