标题: | Chemical mechanical polishing for selective CVD-W |
作者: | Wang, MT Yeh, WK Tsai, MS Tseng, WT Chang, TC Chen, LJ Chen, MC 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
关键字: | selective tungsten chemical vapor deposition;chemical mechanical polishing;removal rate selectivity |
公开日期: | 30-十月-1997 |
摘要: | This work investigates chemical mechanical polishing (CMP) for W-filled contact holes, vias, and trenches by selective chemical vapor deposition. A novel process that combines the CMP technique with selective chemical vapor deposition of tungsten (CVD-W) was employed to remove nail heads due to overgrowth and W-particles on the surface of dielectric due to selectivity loss. The overfilled nail heads and the selectivity loss can be completely removed with very low down-pressure (3 psi) in a very short polishing time (30 s). This indicates that the novel process is very promising for ULSI multilevel interconnection application. The removal rate selectivities of W to thermal oxide, PECVD-TEOS, and BPSG were found to be 47:1, 30:1 and 15:1, respectively, while the selectivities of W to the barrier metals of TiW, Ti and Ta were determined to be 0.6:1, 6:1 and 28:1, respectively. (C) 1997 Elsevier Science S.A. |
URI: | http://hdl.handle.net/11536/246 |
ISSN: | 0254-0584 |
期刊: | MATERIALS CHEMISTRY AND PHYSICS |
Volume: | 51 |
Issue: | 1 |
起始页: | 75 |
结束页: | 79 |
显示于类别: | Articles |
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