標題: | A gold-free fully copper-metallized InP heterojunction bipolar transistor using non-alloyed ohmic contact and platinum diffusion barrier |
作者: | Chang, SW Chang, EY Lee, CS Chen, KS Tseng, CW Tu, YY Lee, CT 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | copper;InP;HBT;metallization;diffusion barrier |
公開日期: | 2005 |
摘要: | A gold-free, fully Cu-metallized InP heterojunction bipolar transistor using non-alloyed Ti/Pt/Cu and Pt/Ti/Pt/Cu ohmic contacts and platinum diffusion barrier has been successfully fabricated. The InGaAs/Ti/Pt/Cu ohmic structure was stable after annealing up to 350 degrees C as judged from the Auger depth profiles. A current-accelerated stress test was conducted on the device with a current density J(C) = 80kA/cm(2) for 24h, and the current gain showed no degradation after the current stress. The devices were also thermally annealed at 200 degrees C for 3 h and showed almost no change in the electrical parameters after the heat treatment. The results show that the Au-free, fully Cu-metallized InP heterojunction bipolar transistor (HBT) can be realized using non-alloyed ohmic contacts and Pt diffusion barrier. |
URI: | http://hdl.handle.net/11536/24735 http://dx.doi.org/10.1143/JJAP.44.L899 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.44.L899 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS |
Volume: | 44 |
Issue: | 28-32 |
起始頁: | L899 |
結束頁: | L900 |
顯示於類別: | 期刊論文 |