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dc.contributor.authorHSIEH, IJen_US
dc.contributor.authorFENG, MSen_US
dc.contributor.authorKUO, KTen_US
dc.contributor.authorLIN, Pen_US
dc.date.accessioned2014-12-08T15:03:57Z-
dc.date.available2014-12-08T15:03:57Z-
dc.date.issued1994-06-01en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/2473-
dc.description.abstractZnGa2O4 films have been prepared by radio frequency (RF) magnetron sputtering at various total pressure, RF power, and substrate temperatures. Microstructure and crystallographic orientation were characterized by x-ray diffraction Surface morphologies were observed by scanning electron microscope. In addition, cathodoluminescence (CL) measurement was employed to observe the emission spectra of ZnGa2O4 films. The influences of various deposition parameters on the properties of grown films were studied. The optimum substrate deposition temperature for luminous characteristics was about 500-degrees-C in this investigation. A blue cathodoluminescent emission peaked at 470 nm was observed. Good luminescent properties were observed in the films which exhibit the standard ZnGa2O4 x-ray diffraction pattern.en_US
dc.language.isoen_USen_US
dc.titleGROWTH OF ZNGA2O4 PHOSPHOR BY RADIO-FREQUENCY MAGNETRON SPUTTERINGen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume141en_US
dc.citation.issue6en_US
dc.citation.spage1617en_US
dc.citation.epage1621en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:A1994NQ33800039-
dc.citation.woscount28-
Appears in Collections:Articles


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