GROWTH OF ZNGA2O4 PHOSPHOR BY RADIO-FREQUENCY MAGNETRON SPUTTERING

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DC 欄位	值	語言
dc.contributor.author	HSIEH, IJ	en_US
dc.contributor.author	FENG, MS	en_US
dc.contributor.author	KUO, KT	en_US
dc.contributor.author	LIN, P	en_US
dc.date.accessioned	2014-12-08T15:03:57Z	-
dc.date.available	2014-12-08T15:03:57Z	-
dc.date.issued	1994-06-01	en_US
dc.identifier.issn	0013-4651	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2473	-
dc.description.abstract	ZnGa2O4 films have been prepared by radio frequency (RF) magnetron sputtering at various total pressure, RF power, and substrate temperatures. Microstructure and crystallographic orientation were characterized by x-ray diffraction Surface morphologies were observed by scanning electron microscope. In addition, cathodoluminescence (CL) measurement was employed to observe the emission spectra of ZnGa2O4 films. The influences of various deposition parameters on the properties of grown films were studied. The optimum substrate deposition temperature for luminous characteristics was about 500-degrees-C in this investigation. A blue cathodoluminescent emission peaked at 470 nm was observed. Good luminescent properties were observed in the films which exhibit the standard ZnGa2O4 x-ray diffraction pattern.	en_US
dc.language.iso	en_US	en_US
dc.title	GROWTH OF ZNGA2O4 PHOSPHOR BY RADIO-FREQUENCY MAGNETRON SPUTTERING	en_US
dc.type	Article	en_US
dc.identifier.journal	JOURNAL OF THE ELECTROCHEMICAL SOCIETY	en_US
dc.citation.volume	141	en_US
dc.citation.issue	6	en_US
dc.citation.spage	1617	en_US
dc.citation.epage	1621	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:A1994NQ33800039	-
dc.citation.woscount	28	-
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