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dc.contributor.authorLin, Y. M.en_US
dc.contributor.authorChen, C. H.en_US
dc.contributor.authorWu, J. S.en_US
dc.contributor.authorLee, C. P.en_US
dc.date.accessioned2014-12-08T15:36:28Z-
dc.date.available2014-12-08T15:36:28Z-
dc.date.issued2014-09-15en_US
dc.identifier.issn0022-0248en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jcrysgro.2014.05.018en_US
dc.identifier.urihttp://hdl.handle.net/11536/24809-
dc.description.abstractThe composition profile and lattice strain of GaAsSb grown on GaAs substrates by molecular beam epitaxy have been investigated using the Rutherford backscattering spectrometry (RBS) and X-ray reciprocal space mapping. Through RBS, we found that the Sb content in the layer increases from the interface to the top surface. The X-ray reciprocal space mapping shows that the GaAsSb lattice also gradually relaxes as the layer becomes thicker. The behavior of composition grading and gradual lattice relaxation is quite different from those of III-V ternary compounds with two group Ill atoms. (C) 2014 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectInterfacesen_US
dc.subjectSurfacesen_US
dc.subjectX-ray diffractionen_US
dc.subjectMolecular beam epitaxyen_US
dc.subjectSemiconducting ternary compoundsen_US
dc.titleCompositional grading in GaAsSb grown on GaAs substratesen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jcrysgro.2014.05.018en_US
dc.identifier.journalJOURNAL OF CRYSTAL GROWTHen_US
dc.citation.volume402en_US
dc.citation.issueen_US
dc.citation.spage151en_US
dc.citation.epage154en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
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