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dc.contributor.authorYang, Chao-Yaoen_US
dc.contributor.authorLu, Yi-Hsuanen_US
dc.contributor.authorLin, Wei-Haoen_US
dc.contributor.authorLee, Min-Hanen_US
dc.contributor.authorHsu, Yung-Jungen_US
dc.contributor.authorTseng, Yuan-Chiehen_US
dc.date.accessioned2014-12-08T15:36:29Z-
dc.date.available2014-12-08T15:36:29Z-
dc.date.issued2014-08-30en_US
dc.identifier.issn0022-3727en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0022-3727/47/34/345003en_US
dc.identifier.urihttp://hdl.handle.net/11536/24824-
dc.description.abstractUsing synchrotron-based x-ray magnetic spectroscopy, we report a study focusing on the local symmetry of Cu-dopant and resultant structural imperfections in mediating Cu-doped ZnO nanoparticles\' ferromagnetism (FM). Prepared by an antisolvent method, Cu appeared to preferably populate on the basal plane of ZnO with a local symmetry of [CuO4]. This unique symmetry was antiferromagnetic in nature, while electronically and structurally coupled to surrounded oxygen vacancies (V-o) that yielded a localized FM, because of a strong dependency on the number/location of the [CuO4] symmetry. Surprisingly, the FM of undoped but oxygen-deficient ZnO appeared to be more itinerant and long-range, where V-o percolated the FM effectively and isotropically through oxygen\'s delocalized orbital. By adopting the approach of structural imperfection, this study clearly identifies V-o\'s (defect\'s) true characters in mediating the FM of magnetic semiconductors which has been thought of as a long-standing debate, and thus provides a different thinking about the traditional extrinsic ferromagnetic-tuning in the semiconductors. It even illuminates recent research concerning the intrinsic FM of low-dimensional systems that contain defects but non-magnetic elements.en_US
dc.language.isoen_USen_US
dc.subjectXMCDen_US
dc.subjectZnOen_US
dc.subjectdefecten_US
dc.titleStructural imperfections and attendant localized/itinerant ferromagnetism in ZnO nanoparticlesen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0022-3727/47/34/345003en_US
dc.identifier.journalJOURNAL OF PHYSICS D-APPLIED PHYSICSen_US
dc.citation.volume47en_US
dc.citation.issue34en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000340236700005-
dc.citation.woscount1-
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