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dc.contributor.authorSu, Sheng-Hanen_US
dc.contributor.authorHsu, Yu-Teen_US
dc.contributor.authorChang, Yung-Huangen_US
dc.contributor.authorChiu, Ming-Huien_US
dc.contributor.authorHsu, Chang-Lungen_US
dc.contributor.authorHsu, Wei-Tingen_US
dc.contributor.authorChang, Wen-Haoen_US
dc.contributor.authorHe, Jr-Hauen_US
dc.contributor.authorLi, Lain-Jongen_US
dc.date.accessioned2014-12-08T15:36:33Z-
dc.date.available2014-12-08T15:36:33Z-
dc.date.issued2014-07-09en_US
dc.identifier.issn1613-6810en_US
dc.identifier.urihttp://dx.doi.org/10.1002/smll.201302893en_US
dc.identifier.urihttp://hdl.handle.net/11536/24882-
dc.language.isoen_USen_US
dc.titleBand Gap-Tunable Molybdenum Sulfide Selenide Monolayer Alloyen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/smll.201302893en_US
dc.identifier.journalSMALLen_US
dc.citation.volume10en_US
dc.citation.issue13en_US
dc.citation.spage2589en_US
dc.citation.epage2594en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000338992900012-
dc.citation.woscount4-
Appears in Collections:Articles


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