Full metadata record
DC FieldValueLanguage
dc.contributor.authorHsu, Hung-Jungen_US
dc.contributor.authorLiang, Shin-Weien_US
dc.contributor.authorHsu, Cheng-Hangen_US
dc.contributor.authorTsai, Chuang-Chuangen_US
dc.date.accessioned2014-12-08T15:36:34Z-
dc.date.available2014-12-08T15:36:34Z-
dc.date.issued2014-07-01en_US
dc.identifier.issn0008-4204en_US
dc.identifier.urihttp://dx.doi.org/10.1139/cjp-2013-0682en_US
dc.identifier.urihttp://hdl.handle.net/11536/24898-
dc.description.abstractThis work aimed at improving the optical management of a-Si: H/a-Si1-xGex:H tandem cells and a-Si1-xGex:H single-junction cells. To improve the optical management, the effects of the a-Si1-xGex:H bandgap, the bandgap graded absorber and the n-type mu c-SiOx:H back reflecting layer on the cell performance were investigated. Optical reflection spectra, internal quantum efficiency, external quantum efficiency (EQE), and cell performance were used to evaluate the improvement of the optical properties of solar cells. The tandem cells with a-Si1-xGex:H bandgap of 1.53 eV exhibited sufficient optical absorption from 630 to 900 nm and thus lead to higher J(SC). Second, the EQE of a-Si1-xGex:H single-junction cell was significantly enhanced from 630 to 720 nm by employing bandgap graded absorber that relatively improved the J(SC) by 3.8% despite that the reduction in EQE from 720 to 900 nm compared to the cell without bandgap grading. Moreover, the mu c-SiOx:H(n)/Ag back reflector showed higher optical reflection than a-Si:H(n)/Ag did, which relatively improved the J(SC) by 12.3%. The cell with mu c-SiOx:H(n)/Ag back reflector exhibited a comparable J(SC) and efficiency to the cell with ITO-Ag. The previously mentioned approaches are relevant to enhance the optical management in cells and can be applied to silicon-based thin-film solar cells.en_US
dc.language.isoen_USen_US
dc.titleOptimization of a-Si1-xGex:H single-junction and a-Si:H/a-Si1-xGex:H tandem solar cells with enhanced optical managementen_US
dc.typeArticleen_US
dc.identifier.doi10.1139/cjp-2013-0682en_US
dc.identifier.journalCANADIAN JOURNAL OF PHYSICSen_US
dc.citation.volume92en_US
dc.citation.issue7-8en_US
dc.citation.spage936en_US
dc.citation.epage939en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000339379500085-
dc.citation.woscount0-
Appears in Collections:Articles