標題: INTERACTIONS BETWEEN AL-1 WT-PERCENT SI THIN-FILM AND W-TI BARRIER LAYER
作者: CHANG, PH
CHEN, HM
LIU, HY
BOHLMAN, JG
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 15-May-1994
摘要: The interaction of Al-1 wt% Si with a W-Ti barrier layer in the Al/Ti3W7/SiO2/Si system was studied over the temperature range of 400-500-degrees-C for reaction times up to 300 h. The interaction was found to be diffusion-controlled, and to occur in a layer-by-layer fashion. The first reaction product is always Al12W, which forms at the Al/Ti3W7 interface. With excess W in the system, Al will eventually be completely converted to Al12W, and further interactions result in the formation of an Al4W layer at the Al12W/Ti3W7 interface. The amount of Al4W increases at the expense of Al12W. Ti plays a minor role in the interaction and forms a small amount of Al3Ti precipitates in the Al12W matrix. Decomposition of the Ti3W7 pseudoalloy into W and Ti phases is not significant, and is not detected by X-ray diffraction even after annealing at 500-degrees-C for 300 h. The kinetics of the Al12W formation follows a parabolic reaction law with an activation energy of 2.53 eV. The sheet resistance of the film is insensitive to compound formation as long as a continuous Al film exists in the system. The sheet resistance increases dramatically when Al is consumed to the extent that it is no longer a continuous film. The sheet resistance of the Al12W layer is estimated to be 570 mOMEGA square-1.
URI: http://dx.doi.org/10.1007/BF00356820
http://hdl.handle.net/11536/2491
ISSN: 0022-2461
DOI: 10.1007/BF00356820
期刊: JOURNAL OF MATERIALS SCIENCE
Volume: 29
Issue: 10
起始頁: 2697
結束頁: 2703
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