標題: A simulation-based evolutionary technique for inverse doping profile problem of sub-65 nm CMOS devices
作者: Li, Yiming
Chen, Cheng-Kai
電信工程研究所
Institute of Communications Engineering
關鍵字: Inverse modeling problems;Process simulation;Device simulation;Doping profile;Evolutionary technique;Optimization method
公開日期: 1-Dec-2006
摘要: In this paper, we utilize an evolutionary technique for inverse doping profile problems of the 65 nm complementary metal oxide semiconductor (CMOS) devices. The approach mainly bases upon the process simulation, device simulation, evolutionary strategy, and empirical knowledge. For a set of given measured I-V curves of the 65 nm CMOS, a developed prototype performs the optimization task to automatically calibrate and inversely search out, for example the doping recipe and device physical model parameters. The simulation-optimization-coupled methodology is complicated theoretically, but our preliminary results imply that it may benefit the development of fabrication technology and can be used for the performance diagnosis, in particular, for sub-65 nm devices.
URI: http://dx.doi.org/10.1007/s10825-006-0023
http://hdl.handle.net/11536/24946
ISSN: 1569-8025
DOI: 10.1007/s10825-006-0023
期刊: JOURNAL OF COMPUTATIONAL ELECTRONICS
Volume: 5
Issue: 4
起始頁: 365
結束頁: 370
Appears in Collections:Articles