完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lai, Yeong-Lin | en_US |
dc.contributor.author | Chang, Edward Yi | en_US |
dc.contributor.author | Lee, Di-Houng | en_US |
dc.contributor.author | Chen, Szu-Hung | en_US |
dc.date.accessioned | 2014-12-08T15:36:36Z | - |
dc.date.available | 2014-12-08T15:36:36Z | - |
dc.date.issued | 2000 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/24951 | - |
dc.description.abstract | A class-B AlGaAs/InGaAs/GaAs pseudomorphic power high-electron-mobility transistor (HEMT) with high power performance has been developed. A simple fabrication method of a sub-micron T-shaped gate using the deep-UV lithography technology with tri-layer photoresists is presented for improvement of efficiency and gain of a pseudomorphic power HEMT. The AlGaAs/InGaAs/GaAs multinary compound material structure of the HEMT was grown by the molecular-beam epitaxy (MBE). The HEMT with a gate width of 3.36 mm and a gate length of 0.5 mu m exhibits a transconductance of 383 mS/mm. The saturation drain-to-source current (IDss) is 265 mA/mm. At an operation frequency of 1.9 GHz, the device demonstrates a power-added efficiency (PAE) of 65% at a drain bias of 1.2 V and a quiescent drain current of 30 mA (3.37% I-DSS). The state-of-the-art power characteristics are, for the first time, achieved by the AlGaAs/InGaAs/GaAs pseudomorphic power HEMT using a sub-micron deep-UV T-shaped gate technology. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | AlGaAs/InGaAs/GaAs | en_US |
dc.subject | pseudomorphic | en_US |
dc.subject | power HEMT | en_US |
dc.subject | deep-UV | en_US |
dc.subject | T-shaped gate | en_US |
dc.title | High-Efficiency AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Using a Sub-Micron Deep-UV T-Shaped Gate Technology | en_US |
dc.type | Article | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 39 | en_US |
dc.citation.issue | 1 | en_US |
dc.citation.spage | 361 | en_US |
dc.citation.epage | 365 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000209019800130 | - |
dc.citation.woscount | 2 | - |
顯示於類別: | 期刊論文 |