標題: | Study the Al-oxide/GaAs Interface Characteristics by Spectral Response of GaAs Solar Cells |
作者: | Lee, Shih-Chang Wen, Tzu-Chi Lee, Wei-I 電子物理學系 Department of Electrophysics |
關鍵字: | wet oxidation;AlAs;solar cell;AR coating;GaAs;interface recombination |
公開日期: | 2000 |
摘要: | The Al-oxide formed by wet-thermal oxidation of AlAs is used as the anti-reflection (AR) coating of the GaAs solar cell. Results of spectral response measurement suggest that the interfacial recombination velocity is extremely high at the Al-oxide/GaAs interface. Adding a 20-nm-thick Al0.4Ga0.6As barrier layer between the Al-oxide and the GaAs emitter can reduce the influence of interfacial recombination and enhance the performance of the GaAs solar cell. The energy conversion efficiency of the GaAs solar cell utilizing the wet oxidation of AlAs to form the AR coating is 19.43% under the luminescence condition of one-sun, AM 1.5G and 100 mW/cm(2). |
URI: | http://hdl.handle.net/11536/24952 |
ISSN: | 0021-4922 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS |
Volume: | 39 |
Issue: | 1 |
起始頁: | 382 |
結束頁: | 384 |
顯示於類別: | 期刊論文 |