ASYMMETRIC DARK CURRENT IN QUANTUM-WELL INFRARED PHOTODETECTORS

doi:10.1063/1.111591

Full metadata record

DC Field	Value	Language
dc.contributor.author	TSAI, KL	en_US
dc.contributor.author	LEE, CP	en_US
dc.contributor.author	CHANG, KH	en_US
dc.contributor.author	LIU, DC	en_US
dc.contributor.author	CHEN, HR	en_US
dc.contributor.author	TSANG, JS	en_US
dc.date.accessioned	2014-12-08T15:03:59Z	-
dc.date.available	2014-12-08T15:03:59Z	-
dc.date.issued	1994-05-02	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.111591	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2495	-
dc.description.abstract	Asymmetric dark current versus voltage characteristics in quantum weil infrared photodetectors have been studied. A model based on asymmetrical potential barriers was proposed. The asymmetrical potential barriers, which are most likely due to the accumulation of oxygen impurities at one of the interfaces, cause the asymmetrical I-V characteristics. The height of the potential spike is found to increase with the Al content in the AlGaAs barriers. Calculations based on our model agree well with experimental results.	en_US
dc.language.iso	en_US	en_US
dc.title	ASYMMETRIC DARK CURRENT IN QUANTUM-WELL INFRARED PHOTODETECTORS	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.111591	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	64	en_US
dc.citation.issue	18	en_US
dc.citation.spage	2436	en_US
dc.citation.epage	2438	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1994NK02600037	-
dc.citation.woscount	3	-
Appears in Collections:	Articles