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dc.contributor.authorTSAI, KLen_US
dc.contributor.authorLEE, CPen_US
dc.contributor.authorCHANG, KHen_US
dc.contributor.authorLIU, DCen_US
dc.contributor.authorCHEN, HRen_US
dc.contributor.authorTSANG, JSen_US
dc.date.accessioned2014-12-08T15:03:59Z-
dc.date.available2014-12-08T15:03:59Z-
dc.date.issued1994-05-02en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.111591en_US
dc.identifier.urihttp://hdl.handle.net/11536/2495-
dc.description.abstractAsymmetric dark current versus voltage characteristics in quantum weil infrared photodetectors have been studied. A model based on asymmetrical potential barriers was proposed. The asymmetrical potential barriers, which are most likely due to the accumulation of oxygen impurities at one of the interfaces, cause the asymmetrical I-V characteristics. The height of the potential spike is found to increase with the Al content in the AlGaAs barriers. Calculations based on our model agree well with experimental results.en_US
dc.language.isoen_USen_US
dc.titleASYMMETRIC DARK CURRENT IN QUANTUM-WELL INFRARED PHOTODETECTORSen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.111591en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume64en_US
dc.citation.issue18en_US
dc.citation.spage2436en_US
dc.citation.epage2438en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1994NK02600037-
dc.citation.woscount3-
Appears in Collections:Articles