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dc.contributor.authorSingh, Ranjodhen_US
dc.contributor.authorMeena, Jagan Singhen_US
dc.contributor.authorChang, Yu-Chengen_US
dc.contributor.authorWua, Chung-Shuen_US
dc.contributor.authorKo, Fu-Hsiangen_US
dc.date.accessioned2014-12-08T15:36:37Z-
dc.date.available2014-12-08T15:36:37Z-
dc.date.issued2014-01-01en_US
dc.identifier.issn2046-2069en_US
dc.identifier.urihttp://dx.doi.org/10.1039/c4ra02077den_US
dc.identifier.urihttp://hdl.handle.net/11536/24965-
dc.description.abstractApart from the development of new dielectric and semiconductor materials, the semiconductor-dielectric interface study is also very important for the optimum performance of organic thin film transistors (OTFTs). Herein, we have reported the detailed synthesis of a whole new family of dielectric materials which are 1,3,5,7-tetrabromoadamantane; 1,3,5,7-tetrachloroadamanatane; 1,3,5,7-tetraiodoadamantane and 1,3,5,7-tetrauraciladamantane (AdUr(4)). The unique ability of these molecules to undergo supramolecular thin film formation at low temperature, was analysed for their potential use as an insulator in organic electronic devices. Owing to the good leakage current density property shown by AdUr4 dielectric material it was further employed as a gate dielectric in regioregular poly(3-hexylthiophene), (P3HT) based OTFT. This OTFT device which was fabricated on a flexible PI plastic substrate has shown a good on/off current ratio (e.g., 2.18 x 10(4)) and high mobility (e.g., 0.15 cm(2) V-1 s(-1)). The semiconductor-dielectric interface study, has revealed that the AdUr(4) gate dielectric layer has guided the P3HT molecular chain domains to undergo edge-on orientation, which is the charge transport direction in OTFTs. In this process, the grazing incidence X-ray diffraction (GI-XRD) analysis and AFM study was also employed.en_US
dc.language.isoen_USen_US
dc.titleControl of active semiconducting layer packing in organic thin film transistors through synthetic tailoring of dielectric materialsen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c4ra02077den_US
dc.identifier.journalRSC ADVANCESen_US
dc.citation.volume4en_US
dc.citation.issue56en_US
dc.citation.spage29383en_US
dc.citation.epage29392en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
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