標題: Embedded InN Dot-Like Structure within InGaN Layers Using Gradient-Indium Content in Nitride-Based Solar Cell
作者: Hsu, Lung-Hsing
Lin, Chien-Chung
Tan, Ming-Hsuan
Yeh, Yun-Ling
Lin, Da-Wei
Han, Hau-Vei
Kuo, Hao-Chung
照明與能源光電研究所
Institute of Lighting and Energy Photonics
關鍵字: APSYS (R);gradient Indium content;InN materials;photovoltaic cells
公開日期: 2013
摘要: The novel design of embedded InN dot-like structure within InGaN was useful as an absorption layer in photovoltaic (PV) cells. We constructed the simulation model by employing the commercial software APSYS (R) and integrating the absorption coefficient of thin InN materials fabricated by metal organic vapor deposition (MOCVD). The model of simulating gradient Indium content of InGaN used as transition interface between InN and GaN was investigated. The results exhibit utilizing the effective variation of Indium content and suitable thickness to approach the optimal characteristic of hybrid InN/InGaN structure within solar cells shall be anticipated to enhance the performance of current nitride-based solar cells.
URI: http://hdl.handle.net/11536/25008
ISBN: 978-1-4799-3299-3
ISSN: 0160-8371
期刊: 2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)
起始頁: 2428
結束頁: 2431
顯示於類別:會議論文