Room-temperature ferromagnetism in amorphous In-Ga-Zn-O films fabricated by using pulsed-laser deposition

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DC Field	Value	Language
dc.contributor.author	Liu, Shiu-Jen	en_US
dc.contributor.author	Su, Shih-Hao	en_US
dc.contributor.author	Juang, Jenh-Yih	en_US
dc.date.accessioned	2014-12-08T15:36:41Z	-
dc.date.available	2014-12-08T15:36:41Z	-
dc.date.issued	2014-09-01	en_US
dc.identifier.issn	0947-8396	en_US
dc.identifier.uri	http://dx.doi.org/10.1007/s00339-014-8263-0	en_US
dc.identifier.uri	http://hdl.handle.net/11536/25035	-
dc.description.abstract	Room-temperature ferromagnetism (RTFM) was observed in pulsed-laser deposited amorphous In-Ga-Zn-O (a-IGZO) films undoped with impurities containing unpaired d or f electrons. The presence of oxygen vacancies in the prepared a-IGZO films was verified by X-ray photoelectron spectroscopy and suggested to be responsible for the observed RTFM. The electrical and optical properties of the a-IGZO films were also investigated.	en_US
dc.language.iso	en_US	en_US
dc.title	Room-temperature ferromagnetism in amorphous In-Ga-Zn-O films fabricated by using pulsed-laser deposition	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1007/s00339-014-8263-0	en_US
dc.identifier.journal	APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING	en_US
dc.citation.volume	116	en_US
dc.citation.issue	3	en_US
dc.citation.spage	1473	en_US
dc.citation.epage	1476	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000340583500074	-
dc.citation.woscount	0	-
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