Room-temperature ferromagnetism in amorphous In-Ga-Zn-O films fabricated by using pulsed-laser deposition

Title:	Room-temperature ferromagnetism in amorphous In-Ga-Zn-O films fabricated by using pulsed-laser deposition
Authors:	Liu, Shiu-Jen Su, Shih-Hao Juang, Jenh-Yih 電子物理學系 Department of Electrophysics
Issue Date:	1-Sep-2014
Abstract:	Room-temperature ferromagnetism (RTFM) was observed in pulsed-laser deposited amorphous In-Ga-Zn-O (a-IGZO) films undoped with impurities containing unpaired d or f electrons. The presence of oxygen vacancies in the prepared a-IGZO films was verified by X-ray photoelectron spectroscopy and suggested to be responsible for the observed RTFM. The electrical and optical properties of the a-IGZO films were also investigated.
URI:	http://dx.doi.org/10.1007/s00339-014-8263-0 http://hdl.handle.net/11536/25035
ISSN:	0947-8396
DOI:	10.1007/s00339-014-8263-0
Journal:	APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume:	116
Issue:	3
Begin Page:	1473
End Page:	1476
Appears in Collections:	Articles

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