标题: Room-temperature ferromagnetism in amorphous In-Ga-Zn-O films fabricated by using pulsed-laser deposition
作者: Liu, Shiu-Jen
Su, Shih-Hao
Juang, Jenh-Yih
电子物理学系
Department of Electrophysics
公开日期: 1-九月-2014
摘要: Room-temperature ferromagnetism (RTFM) was observed in pulsed-laser deposited amorphous In-Ga-Zn-O (a-IGZO) films undoped with impurities containing unpaired d or f electrons. The presence of oxygen vacancies in the prepared a-IGZO films was verified by X-ray photoelectron spectroscopy and suggested to be responsible for the observed RTFM. The electrical and optical properties of the a-IGZO films were also investigated.
URI: http://dx.doi.org/10.1007/s00339-014-8263-0
http://hdl.handle.net/11536/25035
ISSN: 0947-8396
DOI: 10.1007/s00339-014-8263-0
期刊: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume: 116
Issue: 3
起始页: 1473
结束页: 1476
显示于类别:Articles


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