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dc.contributor.authorLi, Dingpingen_US
dc.contributor.authorRosenstein, Baruchen_US
dc.contributor.authorShapiro, B. Yaen_US
dc.contributor.authorShapiro, I.en_US
dc.date.accessioned2019-04-03T06:40:49Z-
dc.date.available2019-04-03T06:40:49Z-
dc.date.issued2014-08-25en_US
dc.identifier.issn2469-9950en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.90.054517en_US
dc.identifier.urihttp://hdl.handle.net/11536/25052-
dc.description.abstractPairing in the Weyl semimetal appearing on the surface of a topological insulator is considered. It is shown that due to an "ultrarelativistic" dispersion relation there is a quantum critical point governing the zero-temperature transition to a superconducting state. Starting from the microscopic Hamiltonian with local attraction, we calculated using the Gor'kov equations, the phase diagram of the superconducting transition at arbitrary chemical potential, and its magnetic properties and critical exponents close to the quantum critical point. The Ginzburg-Landau (GL) effective theory is derived for small chemical potential, allowing us to consider effects of spatial dependence of order parameters in a magnetic field. The GL equations are very different from the conventional ones reflecting the chiral universality class of the quantum phase transition. The order-parameter distribution of a single vortex is found to be different as well. The magnetization near the upper critical field is found to be quadratic, not linear as usual. We discuss the application of these results to recent experiments in which surface superconductivity was found for some three-dimensional topological insulators, and we estimate feasibility of the phonon pairing.en_US
dc.language.isoen_USen_US
dc.titleQuantum critical point in the superconducting transition on the surface of a topological insulatoren_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.90.054517en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume90en_US
dc.citation.issue5en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000341262500006en_US
dc.citation.woscount9en_US
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