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dc.contributor.authorLiu, Chien-Minen_US
dc.contributor.authorLin, Han-Wenen_US
dc.contributor.authorLu, Chia-Lingen_US
dc.contributor.authorChen, Chihen_US
dc.date.accessioned2019-04-03T06:43:33Z-
dc.date.available2019-04-03T06:43:33Z-
dc.date.issued2014-08-19en_US
dc.identifier.issn2045-2322en_US
dc.identifier.urihttp://dx.doi.org/10.1038/srep06123en_US
dc.identifier.urihttp://hdl.handle.net/11536/25059-
dc.description.abstractWe investigate the growth of Cu films on two different Cu seed layers: one with regular < 111 >-oriented grains and the other with very strong < 111 >-preferred orientation. It is found that densely-packed nanotwinned Cu (nt-Cu) can be grown by pulsed electroplating on the strong < 111 >-oriented Cu seed layer without a randomly-oriented transition layer between the nt-Cu and the Cu seed layer. The electroplated nt-Cu grow almost epitaxially on the seed layer and formed < 111 >-oriented columnar structures. However, with the regular < 111 >-oriented Cu seed, there is a randomly-oriented transition layer between the nt-Cu and the regular < 111 >-oriented Cu seed. The results indicate that the seed layer plays a crucial role on the regularity of < 111 >-oriented nanotwinned Cu.en_US
dc.language.isoen_USen_US
dc.titleEffect of grain orientations of Cu seed layers on the growth of < 111 >-oriented nanotwinned Cuen_US
dc.typeArticleen_US
dc.identifier.doi10.1038/srep06123en_US
dc.identifier.journalSCIENTIFIC REPORTSen_US
dc.citation.volume4en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000340712800002en_US
dc.citation.woscount12en_US
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