| Title: | IMPROVEMENT OF POLYSILICON OXIDE CHARACTERISTICS BY FLUORINE INCORPORATION |
| Authors: | CHERN, HN LEE, CL LEI, TF 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
| Issue Date: | 1-May-1994 |
| Abstract: | The effect of fluorine on the polysilicon oxide (polyoxide) characteristics is investigated. It is found that the polyoxide leakage current and breakdown strength are improved as fluorine is incorporated into the oxide film. Experimental results show that the improvement is believed to be due to the oxide stress relaxation rather than the change of the polyoxide/polysilicon interface texture. |
| URI: | http://dx.doi.org/10.1109/55.291593 http://hdl.handle.net/11536/2509 |
| ISSN: | 0741-3106 |
| DOI: | 10.1109/55.291593 |
| Journal: | IEEE ELECTRON DEVICE LETTERS |
| Volume: | 15 |
| Issue: | 5 |
| Begin Page: | 181 |
| End Page: | 182 |
| Appears in Collections: | Articles |
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- Improved ultrathin gate oxide integrity in p(+)-polysilicon-gate p-channel metal oxide semiconductor with medium-dose fluorine implantation / Chen, CC;Lin, HC;Chang, CY;Huang, TY;Chien, CH
- Electrical and reliability improvement in polyoxide by fluorine implantation / Kao, Chyuan Haur;Lai, Chao Sung;Lee, Chung Len
- Characteristics of Pr2O3 gate dielectric thin-film transistors fabricated on fluorine-ion-implanted polysilicon films / Chang, Chia-Wen;Deng, Chih-Kang;Huang, Jiun-Jia;Chang, Hong-Ren;Lei, Tan-Fu
- THE EFFECTS OF FLUORINE PASSIVATION ON POLYSILICON THIN-FILM TRANSISTORS / CHERN, HN;LEE, CL;LEI, TF
- Improved plasma charging immunity in ultra-thin gate oxide with fluorine and nitrogen implantation / Chen, CC;Lin, HC;Chang, CY;Huang, CC;Chien, CH
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