標題: | Improved ultrathin gate oxide integrity in p(+)-polysilicon-gate p-channel metal oxide semiconductor with medium-dose fluorine implantation |
作者: | Chen, CC Lin, HC Chang, CY Huang, TY Chien, CH Liang, MS 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-六月-2000 |
摘要: | Effects of fluorine incorporation on ultrathin (4 nm) gate oxide integrity were investigated by fluorine co-implantation into p(+) polysilicon gate. In contrast to previous reports that fluorine incorporation worsens boron penetration and degrades oxide reliability, it was observed that with a medium F+ dose (similar to 1 x 10(14) cm(-2)), charge-to-breakdown characteristics can be improved without noticeable enhancement of boron penetration. It was also observed that fluorinated oxide depicts improved immunity to plasma damage as is evidenced by suppressed gate leakage current of antenna devices after plasma processing. (C) 2000 The Electrochemical Society. S1099-0062(00)01-101-9. All rights reserved. |
URI: | http://dx.doi.org/10.1149/1.1391127 http://hdl.handle.net/11536/30503 |
ISSN: | 1099-0062 |
DOI: | 10.1149/1.1391127 |
期刊: | ELECTROCHEMICAL AND SOLID STATE LETTERS |
Volume: | 3 |
Issue: | 6 |
起始頁: | 290 |
結束頁: | 292 |
顯示於類別: | 期刊論文 |