IMPROVEMENT OF POLYSILICON OXIDE CHARACTERISTICS BY FLUORINE INCORPORATION

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DC Field	Value	Language
dc.contributor.author	CHERN, HN	en_US
dc.contributor.author	LEE, CL	en_US
dc.contributor.author	LEI, TF	en_US
dc.date.accessioned	2014-12-08T15:04:00Z	-
dc.date.available	2014-12-08T15:04:00Z	-
dc.date.issued	1994-05-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/55.291593	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2509	-
dc.description.abstract	The effect of fluorine on the polysilicon oxide (polyoxide) characteristics is investigated. It is found that the polyoxide leakage current and breakdown strength are improved as fluorine is incorporated into the oxide film. Experimental results show that the improvement is believed to be due to the oxide stress relaxation rather than the change of the polyoxide/polysilicon interface texture.	en_US
dc.language.iso	en_US	en_US
dc.title	IMPROVEMENT OF POLYSILICON OXIDE CHARACTERISTICS BY FLUORINE INCORPORATION	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/55.291593	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	15	en_US
dc.citation.issue	5	en_US
dc.citation.spage	181	en_US
dc.citation.epage	182	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1994NP23600013	-
dc.citation.woscount	11	-
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