完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | CHERN, HN | en_US |
dc.contributor.author | LEE, CL | en_US |
dc.contributor.author | LEI, TF | en_US |
dc.date.accessioned | 2014-12-08T15:04:00Z | - |
dc.date.available | 2014-12-08T15:04:00Z | - |
dc.date.issued | 1994-05-01 | en_US |
dc.identifier.issn | 0741-3106 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/55.291593 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/2509 | - |
dc.description.abstract | The effect of fluorine on the polysilicon oxide (polyoxide) characteristics is investigated. It is found that the polyoxide leakage current and breakdown strength are improved as fluorine is incorporated into the oxide film. Experimental results show that the improvement is believed to be due to the oxide stress relaxation rather than the change of the polyoxide/polysilicon interface texture. | en_US |
dc.language.iso | en_US | en_US |
dc.title | IMPROVEMENT OF POLYSILICON OXIDE CHARACTERISTICS BY FLUORINE INCORPORATION | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/55.291593 | en_US |
dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
dc.citation.volume | 15 | en_US |
dc.citation.issue | 5 | en_US |
dc.citation.spage | 181 | en_US |
dc.citation.epage | 182 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:A1994NP23600013 | - |
dc.citation.woscount | 11 | - |
顯示於類別: | 期刊論文 |