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dc.contributor.authorLee, Chia-Yuen_US
dc.contributor.authorTzou, An-Jyeen_US
dc.contributor.authorLin, Bing-Chengen_US
dc.contributor.authorLan, Yu-Pinen_US
dc.contributor.authorChiu, Ching-Hsuehen_US
dc.contributor.authorChi, Gou-Chungen_US
dc.contributor.authorChen, Chi-Hsiangen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorLin, Ray-Mingen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.date.accessioned2014-12-08T15:36:48Z-
dc.date.available2014-12-08T15:36:48Z-
dc.date.issued2014-09-16en_US
dc.identifier.issn1556-276Xen_US
dc.identifier.urihttp://dx.doi.org/10.1186/1556-276X-9-505en_US
dc.identifier.urihttp://hdl.handle.net/11536/25177-
dc.description.abstractThe flip chip ultraviolet light-emitting diodes (FC UV-LEDs) with a wavelength of 365 nm are developed with the ex situ reactive plasma deposited (RPD) AlN nucleation layer on patterned sapphire substrate (PSS) by an atmospheric pressure metal-organic chemical vapor deposition (AP MOCVD). The ex situ RPD AlN nucleation layer can significantly reduce dislocation density and thus improve the crystal quality of the GaN epitaxial layers. Utilizing high-resolution X-ray diffraction, the full width at half maximum of the rocking curve shows that the crystalline quality of the epitaxial layer with the (RPD) AlN nucleation layer is better than that with the low-temperature GaN (LT-GaN) nucleation layer. The threading dislocation density (TDD) is estimated by transmission electron microscopy (TEM), which shows the reduction from 6.8 x 10(7) cm(-2) to 2.6 x 10(7) cm(-2). Furthermore, the light output power (LOP) of the LEDs with the RPD AlN nucleation layer has been improved up to 30 % at a forward current of 350 mA compared to that of the LEDs grown on PSS with conventional LT-GaN nucleation layer.en_US
dc.language.isoen_USen_US
dc.subjectGaNen_US
dc.subjectFlip chip ultraviolet light-emitting diodes (FC UV-LEDs)en_US
dc.subjectNucleationen_US
dc.subjectReactive plasma deposited AlNen_US
dc.titleEfficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrateen_US
dc.typeArticleen_US
dc.identifier.doi10.1186/1556-276X-9-505en_US
dc.identifier.journalNANOSCALE RESEARCH LETTERSen_US
dc.citation.volume9en_US
dc.citation.issueen_US
dc.citation.epageen_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department友訊交大聯合研發中心zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentD Link NCTU Joint Res Ctren_US
dc.identifier.wosnumberWOS:000342499400001-
dc.citation.woscount0-
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