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dc.contributor.authorChou, Po-Chienen_US
dc.contributor.authorCheng, Stoneen_US
dc.contributor.authorChen, Szu-Haoen_US
dc.date.accessioned2014-12-08T15:36:48Z-
dc.date.available2014-12-08T15:36:48Z-
dc.date.issued2014-09-05en_US
dc.identifier.issn1359-4311en_US
dc.identifier.urihttp://dx.doi.org/10.1015/j.applthermaleng.2014.05.081en_US
dc.identifier.urihttp://hdl.handle.net/11536/25182-
dc.description.abstractThis work presents an extensive thermal characterization of a single discrete GaN high-electron-mobility transistor (HEMT) device when operated in parallel at temperatures of 25 degrees C-175 degrees C. The maximum drain current (I-D (max)), on-resistance (R-ON), pinch-off voltage (V-p) and peak transconductance (g(m)) at various chamber temperatures are measured and correlations among these parameters studied. Understanding the dependence of key transistor parameters on temperature is crucial to inhibiting the generation of hot spots and the equalization of currents in the parallel operation of HEMTs. A detailed analysis of the current imbalance between two parallel HEMT cells and its consequential effect on the junction temperature are also presented. The results from variations in the characteristics of the parallel-connected devices further verify that the thermal stability and switching behavior of these cells are balanced. Two parallel HEMT cells are operated at a safe working distance from thermal runaway to prevent destruction of the hottest cell. (C) 2014 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectGaN HEMTsen_US
dc.subjectPower semiconductor devicesen_US
dc.subjectPower moduleen_US
dc.subjectParallel operationen_US
dc.subjectStatic parametersen_US
dc.titleEvaluation of thermal performance of all-GaN power module in parallel operationen_US
dc.typeArticleen_US
dc.identifier.doi10.1015/j.applthermaleng.2014.05.081en_US
dc.identifier.journalAPPLIED THERMAL ENGINEERINGen_US
dc.citation.volume70en_US
dc.citation.issue1en_US
dc.citation.spage593en_US
dc.citation.epage599en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department機械工程學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Mechanical Engineeringen_US
dc.identifier.wosnumberWOS:000341464400063-
dc.citation.woscount0-
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