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dc.contributor.authorYang, Jyun-Baoen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorHuang, Jheng-Jieen_US
dc.contributor.authorChen, Yu-Tingen_US
dc.contributor.authorTseng, Hsueh-Chihen_US
dc.contributor.authorChu, Ann-Kuoen_US
dc.contributor.authorSze, Simon M.en_US
dc.contributor.authorTsai, Ming-Jinnen_US
dc.contributor.authorZheng, Jin-Chengen_US
dc.contributor.authorBao, Ding-Huaen_US
dc.date.accessioned2014-12-08T15:36:49Z-
dc.date.available2014-12-08T15:36:49Z-
dc.date.issued2014-09-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2014.2336676en_US
dc.identifier.urihttp://hdl.handle.net/11536/25201-
dc.description.abstractThis letter investigates various oxygen concentrations in indium oxide films which induce different resistance switching behaviors, including two self-compliance behaviors and a two-step set process. The accumulated oxygen ions produce an oxygen-rich indium oxide film, which can be considered as a variable series resistor after the forming process. Analyses indicate that the lower self-compliance current can be attributed to this larger variable series resistor from the additional oxygen ions. The more significant oxidation reaction decreases the current of the high resistance state. Hence, power consumption can be reduced effectively.en_US
dc.language.isoen_USen_US
dc.subjectRRAMen_US
dc.subjectnonvolatile resistance switching memoryen_US
dc.subjectindium oxideen_US
dc.titleInfluence of Oxygen Concentration on Self-Compliance RRAM in Indium Oxide Filmen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2014.2336676en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume35en_US
dc.citation.issue9en_US
dc.citation.spage909en_US
dc.citation.epage911en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000341574200006-
dc.citation.woscount0-
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