完整後設資料紀錄
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dc.contributor.authorJian, Sheng-Ruien_US
dc.contributor.authorLee, Sheng-Weien_US
dc.contributor.authorChang, Jeng-Kueien_US
dc.contributor.authorTseng, Chung-Jenen_US
dc.contributor.authorJuang, Jenh-Yihen_US
dc.date.accessioned2014-12-08T15:36:50Z-
dc.date.available2014-12-08T15:36:50Z-
dc.date.issued2014-08-01en_US
dc.identifier.issn1947-2935en_US
dc.identifier.urihttp://dx.doi.org/10.1166/sam.2014.1941en_US
dc.identifier.urihttp://hdl.handle.net/11536/25223-
dc.description.abstractThe nanomechanical characteristics and fracture behaviors of the Ba1-xKxCe0.6Zr0.2Y0.2O3-delta (K-doped BCZY, 0.0 <= x <= 0.15) oxides were investigated by using nanoindentation techniques. The BKCZY samples were prepared by the citrate-ethylenediaminetetraacetic acid (EDTA) complexing sol-gel process, followed by uniaxial pressure pressing and sintering at 1600 degrees C for 4 h. The XRD results indicated that the BKCZY samples occurred predominantly in perovskite-type cubic structures. The hardness and Young\'s modulus of BKCZY samples were measured by a Berkovich nanoindenter operated in continuous contact stiffness measurements (CSM) mode. Results indicated that the hardness and Young\'s modulus of BKCZY sample decreased substantially with increasing the K doping concentration, presumably due to doping-enhanced grain growth. Furthermore, the SEM observations indicated that Berkovich nanoindentation-induced fracture mode was mostly transgranular and the fracture toughness exhibited a similar doping dependence as that of the hardness and Young\'s modulus.en_US
dc.language.isoen_USen_US
dc.subjectSolid Oxide Fuel Cellsen_US
dc.subjectX-Ray Diffractionen_US
dc.subjectScanning Electron Microscopyen_US
dc.subjectNanoindentationen_US
dc.subjectHardnessen_US
dc.subjectFracture Toughnessen_US
dc.titleNanomechanical Properties and Fracture Behaviors of Ba1-xKxCe0.6Zr0.2Y0.2O3-delta Electrolytes by Nanoindentationen_US
dc.typeArticleen_US
dc.identifier.doi10.1166/sam.2014.1941en_US
dc.identifier.journalSCIENCE OF ADVANCED MATERIALSen_US
dc.citation.volume6en_US
dc.citation.issue8en_US
dc.citation.spage1691en_US
dc.citation.epage1696en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000342480600005-
dc.citation.woscount1-
顯示於類別:期刊論文