SUPPRESSION OF THE BORON PENETRATION INDUCED SI/SIO2 INTERFACE DEGRADATION BY USING A STACKED-AMORPHOUS-SILICON FILM AS THE GATE STRUCTURE FOR PMOSFET

doi:10.1109/55.291600

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DC Field	Value	Language
dc.contributor.author	WU, SL	en_US
dc.contributor.author	LEE, CL	en_US
dc.contributor.author	LEI, TF	en_US
dc.contributor.author	CHEN, JF	en_US
dc.contributor.author	CHEN, LJ	en_US
dc.date.accessioned	2014-12-08T15:04:01Z	-
dc.date.available	2014-12-08T15:04:01Z	-
dc.date.issued	1994-05-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/55.291600	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2525	-
dc.description.abstract	This letter reports that the boron penetration through the thin gate oxide into the Si substrate does not only cause a large threshold voltage shift but also induces a large degradation in the Si/SiO2 interface. An atomically flat Si/SiO2 interface can be easily obtained by using a stacked-amorphous-silicon (SAS) film as the gate structure for p+ poly-Si gate MOS devices even the annealing temperature is as high as 1000-degrees-C.	en_US
dc.language.iso	en_US	en_US
dc.title	SUPPRESSION OF THE BORON PENETRATION INDUCED SI/SIO2 INTERFACE DEGRADATION BY USING A STACKED-AMORPHOUS-SILICON FILM AS THE GATE STRUCTURE FOR PMOSFET	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/55.291600	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	15	en_US
dc.citation.issue	5	en_US
dc.citation.spage	160	en_US
dc.citation.epage	162	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1994NP23600006	-
dc.citation.woscount	15	-
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