A Monolithic CMOS/MEMS Accelerometer with Zero-g Calibration Readout Circuit

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Liu, Yu-Sian	en_US
dc.contributor.author	Huang, Chien-Jo	en_US
dc.contributor.author	Kuo, Fu-Yen	en_US
dc.contributor.author	Wen, Kuei-Ann	en_US
dc.contributor.author	Fan, Long-Sheng	en_US
dc.date.accessioned	2014-12-08T15:36:54Z	-
dc.date.available	2014-12-08T15:36:54Z	-
dc.date.issued	2013-01-01	en_US
dc.identifier.isbn	978-1-4673-2232-4; 978-1-4673-2230-0	en_US
dc.identifier.issn		en_US
dc.identifier.uri	http://hdl.handle.net/11536/25291	-
dc.description.abstract	A monolithic accelerometer design with zero-g calibration with TSMC 0.18 mu m mixed-signal 1P6M process is presented. On-chip digital offset calibration enables compensation of random mechanical offset in the sensor due to process variation. The maximum 21 fF capacitance mismatch can be calibrated. The simulation results show that the whole system have 452.1 mV/g sensitivity. The power consumption is about 1.16 mW. The output noise is 26.85 mu g/v Hz at 1KHz.	en_US
dc.language.iso	en_US	en_US
dc.title	A Monolithic CMOS/MEMS Accelerometer with Zero-g Calibration Readout Circuit	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2013 IEEE EUROCON	en_US
dc.citation.volume		en_US
dc.citation.issue		en_US
dc.citation.spage	2106	en_US
dc.citation.epage	2110	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000343135600314	-
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