Radiometric temperature measurement with Si and InGaAs single-photon avalanche photodiode

Title:	Radiometric temperature measurement with Si and InGaAs single-photon avalanche photodiode
Authors:	Wu, J. -Y. Lu, P. -K. Hsiao, Y. -J. Lin, S. -D. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
Issue Date:	1-Oct-2014
Abstract:	We experimentally demonstrate the use of single-photon avalanche photodiode (SPAD) for radiometric temperature measurement. The low dark count rate CMOS SPAD and a commercial InGaAs/InP SPAD can detect the thermal radiation from a blackbody down to the temperatures of 510 and 405 K, respectively. Our work shows that current SPADs are cost-effective thermal sensors for various applications. (C) 2014 Optical Society of America
URI:	http://dx.doi.org/10.1364/OL.39.005515 http://hdl.handle.net/11536/25345
ISSN:	0146-9592
DOI:	10.1364/OL.39.005515
Journal:	OPTICS LETTERS
Volume:	39
Issue:	19
Begin Page:	5515
End Page:	5518
Appears in Collections:	Articles

APA	Wu, J. -Y., Lu, P. -K., Hsiao, Y. -J., & Lin, S. -D. (2014). Radiometric temperature measurement with Si and InGaAs single-photon avalanche photodiode. WOS:000343906400012.
Bibtex	@article{Wu2014Radiometric, title={Radiometric temperature measurement with Si and InGaAs single-photon avalanche photodiode}, author={Wu, J. -Y. and Lu, P. -K. and Hsiao, Y. -J. and Lin, S. -D.}, journal={WOS:000343906400012}, year={2014}, url={https://ir.lib.nycu.edu.tw/handle/11536/25345}, }