標題: | High Mobility Field-Effect Thin Film Transistor Using Room-Temperature High-kappa Gate Dielectrics |
作者: | Hsu, Hsiao-Hsuan Chang, Chun-Yen Cheng, Chun-Hu Chen, Po-Chun Chiu, Yu-Chien Chiou, Ping Cheng, Chin-Pao 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-十月-2014 |
摘要: | This paper reports an InGaZnO thin-film transistor (TFT) that involves using fully room-temperature gate dielectrics on a flexible substrate. The wide bandgap dielectrics of HfO2 and Y2O3 exhibited favorable adhesion properties on a flexible substrate compared with conventional low-kappa SiO2 film. Based on the experimental results, the room-temperature IGZO/HfO TFTs demonstrated effective device integrity, and achieve a low drive voltage of < 2 V, a low threshold voltage of 0.46 +/- 006 V, a low sub-threshold swing of 110 +/- 6 mV/decade and an extremely high mobility of 60.2 +/- 32 cm(2)/V s. The excellent performance of this TFT indicated that it demonstrates considerable potential for active-matrix liquid crystal display applications requiring low power consumption and a high driving current. |
URI: | http://dx.doi.org/10.1109/JDT.2014.2331351 http://hdl.handle.net/11536/25365 |
ISSN: | 1551-319X |
DOI: | 10.1109/JDT.2014.2331351 |
期刊: | JOURNAL OF DISPLAY TECHNOLOGY |
Volume: | 10 |
Issue: | 10 |
結束頁: | |
顯示於類別: | 期刊論文 |