標題: Flexible InGaZnO thin film transistors using stacked Y2O3/TiO2/Y2O3 gate dielectrics grown at room temperature
作者: Hsu, Hsiao-Hsuan
Chang, Chun-Yen
Cheng, Chun-Hu
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: InGaZnO;thin-film transistors;TiO2;Y2O3
公開日期: 1-四月-2013
摘要: In this Letter, we report a low operation voltage and high mobility flexible InGaZnO thin-film transistor (TFT) using room-temperature processed Y2O3/TiO2/Y2O3 gate dielectric. The flexible IGZO TFT showed a low threshold voltage of 0.75 V, a small sub-threshold swing of 137 mV/decade, a good field effect mobility of 32.7 cm(2)/V s, and a large I-on/I-off ratio of 1.7 x 10(6). The low operation voltage, small subthreshold swing and high mobility could be ascribed to the combination of high-kappa TiO2 and large band gap Y2O3, which provide the potential to meet the requirements of low-temperature and low-power portable electronics. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
URI: http://dx.doi.org/10.1002/pssr.201307047
http://hdl.handle.net/11536/21688
ISSN: 1862-6254
DOI: 10.1002/pssr.201307047
期刊: PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
Volume: 7
Issue: 4
起始頁: 285
結束頁: 288
顯示於類別:期刊論文