標題: | Fully room-temperature IGZO thin film transistors adopting stacked gate dielectrics on flexible polycarbonate substrate |
作者: | Hsu, Hsiao-Hsuan Chang, Chun-Yen Cheng, Chun-Hu Yu, Shu-Hung Su, Ching-Yuan Su, Chung-Yen 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | InGaZnO (IGZO);Thin-film transistor (TFT);TiO2;GeO2 |
公開日期: | 1-十一月-2013 |
摘要: | This study demonstrates the feasibility of producing an InGaZnO thin-film transistor (TFT) using a high-kappa germanium oxide (GeO2)/titanium oxide (TiO2)/GeO2 gate stack on a flexible polycarbonate substrate. The flexible TFT exhibited a small sub-threshold swing of 0.132 V/decade, an acceptable field effect mobility of 8 cm(2)/(V s), and a robust I-on/I-off ratio of 2.4 x 10(7). The improved device performance can be attributed to the combined effect of high-kappa TiO2 and the large band gap of GeO2 that exhibits a tendency to remain in a Ge4+ oxidation state at room temperature. (C) 2013 Elsevier Ltd. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.sse.2013.08.009 http://hdl.handle.net/11536/23294 |
ISSN: | 0038-1101 |
DOI: | 10.1016/j.sse.2013.08.009 |
期刊: | SOLID-STATE ELECTRONICS |
Volume: | 89 |
Issue: | |
起始頁: | 194 |
結束頁: | 197 |
顯示於類別: | 期刊論文 |