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dc.contributor.authorHsu, Hsiao-Hsuanen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.contributor.authorCheng, Chun-Huen_US
dc.contributor.authorYu, Shu-Hungen_US
dc.contributor.authorSu, Ching-Yuanen_US
dc.contributor.authorSu, Chung-Yenen_US
dc.date.accessioned2014-12-08T15:33:39Z-
dc.date.available2014-12-08T15:33:39Z-
dc.date.issued2013-11-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.sse.2013.08.009en_US
dc.identifier.urihttp://hdl.handle.net/11536/23294-
dc.description.abstractThis study demonstrates the feasibility of producing an InGaZnO thin-film transistor (TFT) using a high-kappa germanium oxide (GeO2)/titanium oxide (TiO2)/GeO2 gate stack on a flexible polycarbonate substrate. The flexible TFT exhibited a small sub-threshold swing of 0.132 V/decade, an acceptable field effect mobility of 8 cm(2)/(V s), and a robust I-on/I-off ratio of 2.4 x 10(7). The improved device performance can be attributed to the combined effect of high-kappa TiO2 and the large band gap of GeO2 that exhibits a tendency to remain in a Ge4+ oxidation state at room temperature. (C) 2013 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectInGaZnO (IGZO)en_US
dc.subjectThin-film transistor (TFT)en_US
dc.subjectTiO2en_US
dc.subjectGeO2en_US
dc.titleFully room-temperature IGZO thin film transistors adopting stacked gate dielectrics on flexible polycarbonate substrateen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.sse.2013.08.009en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume89en_US
dc.citation.issueen_US
dc.citation.spage194en_US
dc.citation.epage197en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000327291800031-
dc.citation.woscount4-
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